Mechanism of time-dependent oxide breakdown in thin thermally grown SiO2 films

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7671-7681

  Kimura, Mikihiro ^a   Koyama, Hiroshi ^a,b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b JEOL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRIC BREAKDOWN OF SOLIDS; FUSED SILICA; HOLE TRAPS; MOS DEVICES; PHYSICAL CHEMISTRY; POINT DEFECTS; QUANTUM THEORY;

DIELECTRIC BREAKDOWN;

DIELECTRIC FILMS;

EID: 0032620979     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370570     Document Type: Article

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