Trap density dependent inelastic tunneling in stress-induced leakage current

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2645-2649

  Uno, Shigeyasu ^a   Deguchi, Kazuaki ^a   Kamakura, Yoshinari ^a   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Carrier separation; Energy loss; Inelastic tunneling; Neutral trap; Quantum yield; SiO2; Stress induced leakage current

Indexed keywords

ELECTRON TUNNELING; ENERGY DISSIPATION; IONIZATION; QUANTUM THEORY; SILICA;

CARRIER SEPARATION; INELASTIC TUNNELING; NEUTRAL TRAP; QUANTUM YIELD; SIO2; STRESS-INDUCED LEAKAGE CURRENT;

LEAKAGE CURRENTS;

EID: 31544461735     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2645     Document Type: Article

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