An analytical model of SiC MESFET incorporating trapping and thermal effects

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1709-1715

  Mukherjee, Sankha S ^a   Islam, Syed S ^a   Bowman, Robert J ^a  

^a Rochester Institute of Technology   (United States)

Author keywords

MESFET; Self heating effects; SiC; Trapping effects

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; TRANSPORT PROPERTIES;

BUFFER LAYERS; DRAIN BIAS; DRAIN CURRENT;

MESFET DEVICES;

EID: 3142752241     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.004     Document Type: Conference Paper

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