Oxide roughness effect on tunneling current of MOS diodes

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2204-2208

  Hsu, B C ^a   Chen, K F ^a   Lai, C C ^a   Lee, S W ^b   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Device simulation; Metal oxide silicon diode (MOS); Roughness; Tunneling current

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; MORPHOLOGY; MOS DEVICES; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SURFACE ROUGHNESS; SURFACES;

MOS DIODES; OXIDE ROUGHNESS EFFECT; TUNNELING CURRENT;

TUNNEL DIODES;

EID: 0037004303     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805229     Document Type: Article

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