Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 186-196

  Li, Bincheng ^a,b,c   Shaughnessy, Derrick ^a   Mandelis, Andreas ^a,b   Batista, Jerias ^a   Garcia, Jose ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b Photo Thermal Diagnostics Inc   (Canada)

^c INSTITUTE OF OPTICS AND ELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DATA REDUCTION; ION IMPLANTATION; OPTICAL PROPERTIES; PARAMETER ESTIMATION; RADIOMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; TIME DOMAIN ANALYSIS;

MULTIPARAMETER FITTING; OPTICAL DAMAGE; PHOTOCARRIER RADIOMETRY (PCR); SURFACE RECOMBINATION;

SILICON WAFERS;

EID: 3142704571     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755847     Document Type: Article

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