Non-contacting measurements of photocarrier lifetimes in bulk- and polycrystalline thin-film Si photoconductive devices by photothermal radiometry

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5332-5341

  Mandelis, A ^a,c   Othonos, A ^a   Christofides, C ^a   Boussey Said, J ^b  

^a UNIVERSITY OF CYPRUS   (Cyprus)

^b CNRS   (France)

^c UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFERENTIAL EQUATIONS; ELECTRIC CURRENT MEASUREMENT; FREQUENCY RESPONSE; MATHEMATICAL MODELS; PHOTOCONDUCTING DEVICES; PLASMAS; RADIOMETRY; SILICON WAFERS; THERMAL DIFFUSION;

DIFFUSIVITY; INFRARED PHOTOTHERMAL RADIOMETRY; JOULE HEATING; PHOTOCARRIER LIFETIMES; SURFACE RECOMBINATION VELOCITY;

THIN FILM DEVICES;

EID: 0030283339     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363472     Document Type: Article

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