Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1497-1504

  Schonecker A ^a   Eikelboom, J A ^a   Burgers, A R ^a   Lolgen P ^a   Leguijt, C ^a   Sinke, W C ^a  

^a TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRONS; FREQUENCIES; HARMONIC GENERATION; LIGHT MODULATION; MATHEMATICAL MODELS; MICROWAVES; PHASE MEASUREMENT; SENSITIVITY ANALYSIS; SILICON SOLAR CELLS; VELOCITY MEASUREMENT;

BULK CARRIER LIFETIME; FREE CARRIER ABSORPTION; MICROWAVE REFLECTION; SURFACE RECOMBINATION VELOCITY;

SILICON WAFERS;

EID: 0030084548     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360991     Document Type: Article

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