Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5236-5243

  Shaughnessy, Derrick ^a   Mandelis, Andreas ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION; ELECTRONIC PROPERTIES; INTERFACIAL ENERGY; ION IMPLANTATION; LASER APPLICATIONS; PHOTONS; PROFILOMETRY; RADIOMETRY; SPECTROSCOPIC ANALYSIS; TRANSPORT PROPERTIES;

PHOTOTHERMAL RADIOMETRY (PTR);

SILICON WAFERS;

EID: 0038324377     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1565498     Document Type: Article

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