Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 300-309

  Skarlatos, D ^a   Kapetanakis, E ^a   Normand, P ^a   Tsamis, C ^a   Perego, M ^b   Ferrari, S ^b   Fanciulli, M ^b   Tsoukalas, D ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b LABORATORIO MDM   (Italy)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE STATES; LOW ENERGY IMPLANTATION; STATE-OF-THE-ART PROCESS FLOW; THERMAL OXIDATION; TUNNELING CURRENTS;

APPROXIMATION THEORY; CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; FERMI LEVEL; ION IMPLANTATION; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; OXIDATION; PARAMETER ESTIMATION; RAPID THERMAL ANNEALING; REDUCTION; SUBSTRATES;

SILICON;

EID: 3142659634     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1739286     Document Type: Article

References (19)

1. M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, J. Appl. Phys. 90, 2057 (2001).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. V. Ioannou-Sougleridis, G. Vellianitis, and A. Dimulas, J. Appl. Phys. 93, 3982 (2003).
4. A. Dimoulas, G. Vellianitis, A. Travlos, V. Ioannou-Sougleridis, and A. Nassiopoulou, J. Appl. Phys. 92, 426 (2002).
5. A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, A. Nylandsted Larsen, N. Cherkashin, A. Claverie, P. Normand, E. Kapetanakis, D. Skarlatos, and D. Tsoukalas, Appl. Phys. Lett. 82, 1212 (2003).
6. P. Dimitrakis, E. Kapetanakis, P. Normand, D. Skarlatos, D. Tsoukalas, K. Beltsios, A. Claverie, G. Benassayag, C. Bonafos, D. Chassaing, and V. Soncini, Mater. Sci. Eng., B 101, 14 (2003).
7. A. Ikeda, M. Abd Elnaby, T. Fujimura, R. Hattori, and Y. Kuroki, Thin Solid Films 385, 215 (2001).
8. I.-H. Nam, J. S. Sim, S. I. Hong, B.-C. Park, J. D. Lee, S.-W. Lee, M.-S. Kang, Y.-W. Kim, K.-P. Suh, and W. S. Lee, IEEE Trans. Electron Devices 48, 2310 (2001).
9. J.-P. Carrere, A. Grouillet, F. Guylader, A. Beverina, M. Bidaud, and A. Halimaoui, Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC 2002), (24-26 September 2002, Firenze, Italy, p. 155.
10. H. R. Soleimani, B. S. Doyle, and A. Philipossian, J. Electrochem. Soc. 142, L132 (1995).
11. L. S. Adam, M. E. Law, O. Documaci, and S. Hegde, J. Appl. Phys. 91, 1894 (2002).
12. D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003).
13. M. Matsumura and Y. Hirose, Jpn. J. Appl. Phys., Part 2 38, L845 (1999).
14. S. Kar and W. E. Dahlke, Solid-State Electron. 15, 221 (1972).
15. E. M. Vogel, W. K. Henson, and C. A. Richter, IEEE Trans. Electron Devices 47, 601 (2000).
16. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
17. W. K. Henson, K. Z. Ahmed, E. M. Vogel, J. R. Hauser, J. J. Wortman, R. D. Venables, M. Xu, and D. Vanables, IEEE Electron Device Lett. 20, 179 (1999).
18. E. Kapetanakis, D. Skarlatos, C. Tsamis, P. Normand, and D. Tsoukalas, Appl. Phys. Lett. 82, 3701 (2003).
19. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).