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Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1832-1838

Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate

(3) Skarlatos, D a Tsamis, C a Tsoukalas, D a,b

a INSTITUTE OF MICROELECTRONICS (Greece)

b NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN IMPLANTATION;

CRYSTAL DEFECTS; DIFFUSION; ELECTRONIC EQUIPMENT; NITROGEN; OXIDATION; REACTION KINETICS; SILICA; THERMAL EFFECTS;

SILICON WAFERS;

EID: 0037321604 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1535260 Document Type: Article

Times cited : (10)

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