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Volumn 385, Issue 1-2, 2001, Pages 215-219

Oxynitridation of silicon with nitrogen plasma for flash memory applications characterized by high frequency capacitance-voltage measurements

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FLASH MEMORY; NITRIDING; PLASMA APPLICATIONS; SILICON NITRIDE; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC CONCENTRATION RATIO; NITROGEN PLASMA; OXYNITRIDATION; RAPID THERMAL OXIDATION;

SILICON WAFERS;

EID: 0035312083 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(00)01892-7 Document Type: Article

Times cited : (8)

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