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Volumn 38, Issue 8 A, 1999, Pages
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Extraction of the capacitance of a Metal Oxide Semiconductor Tunnel Diode (MOSTD) biased in accumulation
a a |
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
CAPACITORS;
ELECTRIC IMPEDANCE;
ELECTRIC NETWORK ANALYSIS;
ELECTRON TUNNELING;
EQUIVALENT CIRCUITS;
FERMI LEVEL;
MOS DEVICES;
OXIDES;
RESISTORS;
SUBSTRATES;
CAPACITANCE VOLTAGE METHOD;
IMPEDANCE ANALYSIS;
METAL OXIDE SEMICONDUCTOR TUNNEL DIODE;
ULTRATHIN OXIDE;
TUNNEL DIODES;
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EID: 0033172194
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.l845 Document Type: Article |
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Times cited : (16)
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References (9)
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