Triple gate oxide by nitrogen implantation integrated in a 0.13μm CMOS flow

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 155-158

  Carrere, J P ^a   Grouillet, A ^b   Guyader, F ^a   Beverina, A ^a   Bidaud, M ^c   Halimaoui, A ^a  

^a STMICROELECTRONICS   (France)

^b Central R and D   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; NITROGEN;

CMOS DEVICES; DRY AND WET; DUAL GATE OXIDE; GATE OXIDATION; GATE OXIDE; NITROGEN IMPLANTATION; REFERENCE STANDARD; TRIPLE-GATE;

GATES (TRANSISTOR);

EID: 84907701944     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194893     Document Type: Conference Paper

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6. A. Ono et al., VLSI symp Tech. Digest, 2001.