Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors - A critical review

Vacuum

Volumn 51, Issue 4, 1998, Pages 741-745

  Kuo, Yue ^a,b  

^a Texas AandM University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ENERGY ABSORPTION; GATES (TRANSISTOR); MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SURFACE PROPERTIES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

DIELECTRIC STRUCTURE;

DIELECTRIC FILMS;

EID: 0032316962     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00282-6     Document Type: Review

References (13)

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