Indium growth on Si(100)-2 × 1 by femtosecond pulsed laser deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 6, 2005, Pages 1681-1686

  Hafez, M A ^a   Hegazy, M S ^a   Elsayed Ali, H E ^a  

^a Old Dominion University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM MORPHOLOGY; IN ISLANDS; LATTICE SPACING;

ATOMIC FORCE MICROSCOPY; HIGH ENERGY ELECTRON DIFFRACTION; INDIUM; MORPHOLOGY; PULSED LASER DEPOSITION;

SILICON;

EID: 31144470678     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2073427     Document Type: Article

References (32)

1. J. Knall, J.-E. Sundgren, J. E. Greene, A. Rockett, and S. A. Barnett, Appl. Phys. Lett. 45, 689 (1984).
2. P. C. Sharma, K. W. Alt, D. Y. Yeh, and K. L. Wang, Appl. Phys. Lett. 75, 1273 (1999).
3. B. H. Koo, T. Hanada, H. Makino, J. H. Chang, and T. Yao, J. Cryst. Growth 229, 142 (2001).
4. X.-Q. Dai, W.-W. Ju, G.-T. Wang, and M. H. Xie, Surf. Sci. 572, 77 (2004).
5. J.-L. Li, X.-J. Liang, J.-F. Jia, X. Liu, J.-Z. Wang, E.-G. Wang, and Q.-K. Xue, Appl. Phys. Lett. 79, 2826 (2001).
6. J.-Z. Wang, J.-F. Jia, X. Liu, W.-D. Chen, and Q.-K. Xue, Phys. Rev. B 65, 235303 (2002).
7. J.-F. Jia, X. Liu, J.-Z. Wang, J.-L. Li, X. S. Wang, Q.-K. Xue, Z.-Q. Li, Z. Zhang, and S. B. Zhang, Phys. Rev. B 66, 165412 (2002).
8. H. T. Yang and P. M. Mooney, J. Appl. Phys. 58, 1854 (1985).
9. J. Knall, J. E. Sundgren, G. V. Hansson, and J. E. Greene, Surf. Sci. 166, 512 (1986).
10. A. A. Baski, J. Nogami, and C. F. Quate, Phys. Rev. B 43, 9316 (1991).
11. M. M. R. Evans and J. Nogami, Phys. Rev. B 59, 7644 (1999).
12. A. A. Baski, J. Nogami, and C. F. Quate, J. Vac. Sci. Technol. A 9, 1946 (1991).
13. Z.-C Dong, T. Yakabe, D. Fujita, Q. D. Jiang, and H. Nejo, Surf. Sci. 380, 23 (1997).
14. H. W. Yeom, T. Abukawa, M. Nakamura, X. Chen, S. Suzuki, S. Sato, K. Sakamoto, T. Sakamoto, and S. Kono, Surf. Sci. 340, L983 (1995).
15. M. M. R. Evans, J. C. Glueckstein, and J. Nogami, Surf. Sci. 406, 246 (1998).
16. O. Kubo, J. T. Ryu, H. Tani, T. Harada, M. Katayama, and K. Oura, Jpn. J. Appl. Phys., Part 1 38, 3849 (1999).
17. T. Chen, X. M. Li, and S. Zhang, Solid State Commun. 131, 523 (2004).
18. L. S.-J. Peng, X. X. Xi, B. H. Moeckly, and S. P. Alpay, Appl. Phys. Lett. 83, 4592 (2003).
19. Y. Temko, T. Suzuki, and K. Jacobi, Appl. Phys. Lett. 82, 2142 (2003).
20. J. Y. Park and R. J. Phaneuf, J. Appl. Phys. 92, 2139 (2002).
21. B. V. Rao, M. Atoji, D. M. Li, T. Okamoto, T. Tambo, and C. Tatsuyama, Jpn. J. Appl. Phys., Part 1 37, L1297 (1998).
22. P. C. Sharma, K. W. Alt, D. Y. Yeh, and K. L. Wang, Appl. Phys. Lett. 75, 1273 (1999).
23. F. Qian, R. K. Singh, S. K. Dutta, and P. P. Pronko, Appl. Phys. Lett. 67, 3120 (1995).
24. J. C. Miller and R. F. Haglund, Laser Ablation and Desorption, Experimental Methods in the Physical Sciences (Academic, Boston, 1998), Vol. 30.
25. J. Shen, Z. Gai, and J. Kirschner, Surf. Sci. Rep. 52, 163 (2004).
26. M. A. Hafez, K. A. Elamrawi, and H. E. Elsayed-Ali, Appl. Surf. Sci. 233, 42 (2004).
27. M. S. Hegazy and H. E. Elsayed-Ali, J. Vac. Sci. Technol. A 20, 2068 (2002).
28. J. T. Ryu, O. Kubo, H. Tani, T. Harada, M. Katayama, and K. Oura, Surf. Sci. 433-435, 575 (1999).
29. J. M. Van Hove, P. Pukite, P. I. Cohen, and C. S. Lent, J. Vac. Sci. Technol. A 1, 609 (1983).
30. C. Zhu, T. Hayashi, S. Misawa, and S. Tsukahara, Jpn. J. Appl. Phys., Part 1 33, 3706 (1994).
31. J. Perriere, E. Millon, W. Seiler, C. Boulmer-Leborgne, V. Carciun, O. Albert, J. C. Loulergue, and J. Etchepare, J. Appl. Phys. 91, 690 (2002).
32. J. E. Northrup, M. C. Schabel, C. J. Karlsson, and R. I. Uhrberg, Phys. Rev. B 44, 13799 (1991).