Polarity dependence in pulsed scanning tunneling microscopy fabrication and modification of metal nanodots on silicon

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 2139-2143

  Park, Jeong Young ^a   Phaneuf, R J ^b  

^a Bldg 142   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT TYPE; DOT FORMATIONS; FIELD EVAPORATION; METAL SUBSTRATE; NANODOTS; POLARITY DEPENDENCE; POSITIVE PULSE; PULSE DURATIONS; SI (100) SUBSTRATE; SI(1 0 0); VOLTAGE PULSE;

ALUMINUM; ELECTRIC POTENTIAL; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES;

FABRICATION;

EID: 0037103469     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495889     Document Type: Article

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