STM studies of initial In growth on Si(100)2 x 1: The In ad-dimer chain and its I-V characteristics

Surface Science

Volumn 380, Issue 1, 1997, Pages 23-30

  Dong, Z C ^a   Yakabe, T ^a   Fujita, D ^a   Jiang, Q D ^a   Nejo, H ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Growth; Indium; Metal semiconductor interfaces; Peierls distortion; Scanning tunneling microscopy (STM); Silicon; Surface electronic phenomena

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACE PHENOMENA;

METAL SEMICONDUCTOR INTERFACES; PEIERLS DISTORTION;

INDIUM;

EID: 0031147315     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00014-9     Document Type: Article

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