First-principles study of indium on silicon (1 0 0) - The structure, defects and interdiffusion

Surface Science

Volumn 572, Issue 1, 2004, Pages 77-83

  Dai, Xian Qi ^a   Ju, Wei Wei ^a   Wang, Guang Tao ^a   Xie, M H ^b  

^a HENAN NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Indium; Silicon; Surface defects; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; DIFFUSION; INDIUM; LOW TEMPERATURE EFFECTS; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TOPOGRAPHY;

INTERDIFFUSION; ROUGHNESS AND TOPOGRAPHY; SURFACE DEFECTS; SURFACE DIFFUSION;

SILICON COMPOUNDS;

EID: 7644241630     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.08.024     Document Type: Article

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