Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1273-1275

  Sharma, P C ^a   Alt, K W ^a   Yeh, D Y ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DIFFUSION IN SOLIDS; FILM GROWTH; MONOLAYERS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

OSTWALD RIPENING; STRANSKI-KRASTANOW MODE;

SEMICONDUCTING FILMS;

EID: 0032621664     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124665     Document Type: Article

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