The growth of indium thin films on clean and hydrogen-terminated Si (100) surfaces

Surface Science

Volumn 433-435, Issue , 1999, Pages 575-580

  Ryu, J T ^a,b   Kubo, O ^a   Tani, H ^a   Harada, T ^a   Katayama, M ^a   Oura, K ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

Hydrogen; Indium; Metal thin film growth; Scanning tunneling microscopy (STM); Silicon; Surfactant

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; FILM GROWTH; HYDROGEN; INDIUM; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE ACTIVE AGENTS; SURFACES; THIN FILMS;

ANTISURFACTANT EFFECTS; RECONSTRUCTION PHASE;

SILICON;

EID: 0033353210     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00033-3     Document Type: Article

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