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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 PART A, 1998, Pages

In(4×3) reconstruction mediated heteroepitaxial growth of InSb on Si(001) substrate

(6) Rao, Bommisetty V a Atoji, Makoto a Li, Don M a Okamoto, Tetsukazu a Tambo, Toyokazu a Tatsuyama, Chiei a

Author keywords

(4 3) In; Heteroepitaxy; In; InSb; Scanning tunneling microscopy; Semiconductor surfaces and interfaces; Thin film growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; FILM GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL MICROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY CRYSTALLOGRAPHY;

HETEROEPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032208421 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1297 Document Type: Article

Times cited : (19)

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