RHEED investigation of the formation process of InAs quantum dots on (1 0 0) InAlAs/InP for application to photonic devices in the 1.55 μm range

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 142-146

  Koo, B H ^a   Hanada, T ^a   Makino, H ^a   Chang, J H ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

SOLID-SOURCE MOLCULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398857     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01109-5     Document Type: Article

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