Studies on the interfacial and crystallographic characteristics of Al 2 O3/SiO2/Si and ZrO2/SiO 2/Si stacks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 144-148

  Kim, Joong Jung ^a   Yang, Jun Mo ^a   Jang, Se Aug ^a   Lim, Kwan Yong ^a   Cho, Heung Jae ^a   Lee, Soun Young ^a   Kawasaki, Masahiro ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b JEOL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; DIELECTRIC FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; SILICA; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM COMPOUNDS;

ATOMIC SCALE; INTERFACIAL LAYERS;

ALUMINUM COMPOUNDS;

EID: 31144469889     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1849214     Document Type: Article

References (24)

1. P. Singer, Semicond. Int. 23, 66 (2000).
2. J. Baliga, Semicond. Int. 23, 83 (2000).
3. G. S. Higashi and C. G. Flemming, Appl. Phys. Lett. 55, 1963 (1989).
4. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett. 76, 176 (2000).
5. D. G. Park, H. J. Cho, K. Y. Lim, C. Lim, I. S. Yeo, J. S. Roh, and J. W. Park, J. Appl. Phys. 89, 6275 (2001).
6. J. Shappir, A. Anis, and I. Pinsky, IEEE Trans. Electron Devices 33, 442 (1986).
7. M. Copel, M. A. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
8. K. Y. Lim, D. G. Park, H. J. Cho, J. J. Kim, J. M. Yang, I. S. Choi, I. S. Yeo, and J. W. Park, J. Appl. Phys. 91, 414 (2002).
9. L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W.-J. Qi, R. Nieh, S. Gopalan, and J. C. Lee, VLSI Technology Symposium, 2000, p. 44.
10. G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Appl. Phys. Lett. 73, 1517 (1998).
11. I. C. Kizilyalli, R. P. S. Huang, and P. K. Roy, IEEE Trans. Electron Devices 19, 423 (1998).
12. W. Tsai, L. Ragnarsson, P. J. Chen, B. Onsia, R. J. Carter, E. Cartier, E. Young, M. Green, M. Caymax, S. De Gendt, and M. Heyns, VLSI Technology Symposium, 2003, p. 21.
13. Y. Kim, C. Lim, C. D. Young, K. Matthews, J. Barnett, B. Foran, A. Agarwal, G. A. Brown, G. Bersuker, P. Zeitzoff, M. Gardner, R. W. Murto, L. Larson, C. Metzner, S. Kher, and H. R. Huff, VLSI Technology Symposium, 2003, p. 167.
14. Y. Kim, G. Gebara, M. Freiler, J. Barnett, D. Riley, J. Chen, K. Torres, J. Lim, B. Foran, F. Shaapur, A. Agarwal, P. Lysaght, G. A. Brown, C. Young, S. Borthakur, H.-J. Li, B. Nguyen, P. Zeitzoff, G. Bersuker, D. Derro, R. Bergmann, R. W. Murto, A. Hou, H. R. Huff, E. Shero, C. Pomarede, M. Givens, M. Mazanec, and C. Werkhoven, Tech. Dig. Int. Electron Devices Meet., 2001, p. 455.
15. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
16. D. Shindo and K. Hiraga, High-Resolution Electron Microscopy for Materials Science (Springer, Tokyo, 1998).
17. D. Shindo and T. Oikawa, Analytical Electron Microscopy for Materials Science, (Springer, Tokyo, 2002).
18. R. F. Egerton, Electron Energy-Loss Spectroscopy in the Electron Microscope, 2nd ed. (Plenum, New York, 1996).
19. M. Kawasaki, T. Oikawa, K. Ibe, K. H. Park, and M. Shiojiri, J. Electron Microsc. 47, 335 (1998).
20. J. M. Yang, S. Lee, J. C. Park, D. W. Lee, T. K. Lee, J. T. Choi, S. Y. Lee, M. Kawasaki, and T. Oikawa, J. Appl. Phys. 93, 855 (2003).
21. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) 399, 758 (1999).
22. O. Renault, L. G. Gosset, D. Rouchon, and A. Ermolieff, J. Vac. Sci. Technol. A 20, 1867 (2002).
23. W. D. Kingery, Introduction to Ceramics, 2nd ed. (Wiley, New York, 1976).
24. Diffraction data, JCPDS file, 1999.