Approach to interface roughness of silicide thin films by micro-Raman imaging

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 468-474

  Zhao, F F ^a   Sun, W X ^b   Feng, Y P ^a   Zheng, J Z ^a   Shen, Z X ^a   Pang, C H ^c   Chan, L H ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; CORRELATION METHODS; IMAGING TECHNIQUES; INTERFACES (MATERIALS); LEAKAGE CURRENTS;

INTERFACE ROUGHNESS; LARGE JUNCTION LEAKAGE CURRENTS; MICRO-RAMAN IMAGING; SI-BASED DEVICES;

SURFACE ROUGHNESS;

EID: 31144453860     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1868646     Document Type: Conference Paper

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