Selective etching of GaN over AlxGa1-xN using reactive ion plasma of Cl2/CH4/Ar gas mixture

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 42-43

  Basak, Durga ^a   Yamashita, Kenji ^a   Sugahara, Tomoya ^a   Nakagawa, Daisuke ^a   Fareed, Qhalid ^a   Nishino, Katsushi ^a   Shiro Saka, I ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN; Etching; GaN; Reactive ion plasma; Selectivity

Indexed keywords

ANISOTROPY; ARGON; CHLORINE; COMPOSITION; METHANE; MIXTURES; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; REACTIVE ION PLASMA; SELECTIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032686351     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.42     Document Type: Article

References (4)

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