Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 A, 2003, Pages

  Wu, Tong ^a   Hao, Zhi Biao ^a   Tang, Guang ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

AlGaN; GaN; ICP; Surface analysis; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; MORPHOLOGY; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

GAS CHEMISTRIES; ROOT-MEAN-SQUARE ROUGHNESS; ULTRA-SMOOTH ETCHED SURFACE;

HETEROJUNCTIONS;

EID: 0038398887     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l257     Document Type: Letter

References (16)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, and T. Matsushita: Appl. Phys. Lett. 68 (1996) 2105.
2. S. Nakamura, T. Mukai and M. Senoh: Appl. Phys. Lett. 64 (1994) 1687.
3. S. Keller, Y.-F. Wu, G. Parish, N. Ziang, J. J. Xu, B. P. Keller, S. P. DenBaars and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 552.
4. I. Adesia, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman: MRS Internet J. Nitride Semicond. Res. 4S1, G1.4 (1999).
5. H. Cho, Y. B. Hahn, D. C. Hays, C. R. Abernathy, S. M. Donovan, J. D. MacKenzie and S. J. Pearton: J. Vac. Sci. & Technol. A 17 (1999) 2202.
6. H. S. Kim, G. Y. Yeom, J. W. Lee and T. I. Kim: J. Vac. Sci. & Technol. A 17 (1999) 2214.
7. Y. H. Lee, H. S. Kim, G. Y. Yeom, J. W. Lee, M. C. Yoo and T. I. Kim: J. Vac. Sci. & Technol. A 16 (1998) 1478.
8. L. F. Easterman and U. K. Mishra: IEEE Spectrum 5 (2002) 28.
9. U. K. Mishra, Y.-F. Wu, B. P. Keller, S. Keller and S. P. Denbaars: IEEE Trans. Microwave Theory & Tech. 46 (1998) 756.
10. C. B. Vartuli, S. J. Pearton, J. W. Lee, J. Hong, J. D. MacKenzie and C. R. Abernathy: Appl. Phys. Lett. 69 (1996) 1426.
11. R. J. Shul, C. G. Willison, M. M. Bridges and J. Han: J. Vac. Sci. & Technol. A 16 (1998) 1621.
12. J. H. Thomas III and L. H. Hammer: J. Appl. Phys. 68 (1990) 2400.
13. T. Banjo, M. Tsuchihashi, M. Hanazaki, M. Tuda and K. Ono: Jpn. J. Appl. Phys. 36 (1997) 4824.
14. H. S. Kim, D. H. Lee, J. W. Lee, T. I. Kim and G. Y. Yeom: Vacuum 56 (2000) 45.
15. S. C. McNevin: J. Vac. Sci. & Technol. B 8 (1990) 1212.
16. Y. Han, S. Xue, W. Guo, Z. Hao and Y. Luo: Proc. SPIE 4918 (2002) 27.