|
Volumn 38, Issue 4 B, 1999, Pages 2646-2651
|
Reactive ion etching of GaN and AlxGa1-xN using Cl2/CH4/Ar plasma
a a a a a a a |
Author keywords
AlGaN; CH4; Dry etching; GaN; Reactive ion plasma
|
Indexed keywords
|
EID: 0343747098
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.2646 Document Type: Article |
Times cited : (17)
|
References (14)
|