Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl2/Ar plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2336-2341

  Zhirnov, Evgeny ^a   Stepanov, Sergei ^a   Wang, Wang Nang ^a   Shreter, Y G ^b   Takhin, D V ^b   Bochkareva, N I ^b  

^a University of Bath   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; GASES; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CATHODE MATERIALS; ORGANIC CONTAMINATION; PROCESS CHAMBERS; QUARTZ COVERPLATE;

SILICON COMPOUNDS;

EID: 10244234123     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1798711     Document Type: Article

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