Model relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3596-3604

  Jain, Pushkar ^a   Bhagwat, Vinay ^a   Rymaszewski, Eugene J ^a   Lu, Toh Ming ^a   Berg, Soren ^b   Cale, Timothy S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC FILMS; ELECTRIC PROPERTIES; HYSTERESIS; LEAKAGE CURRENTS; OXYGEN; PARTIAL PRESSURE; SPUTTERING; TANTALUM COMPOUNDS;

PROCESS VARIABLES;

THIN FILMS;

EID: 0037444927     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1543650     Document Type: Article

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