Effect of surface temperature on plasma-surface interactions in an inductively coupled modified gaseous electronics conference reactor

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 6, 2005, Pages 1657-1667

  Zhou, Baosuo ^a,b   Joseph, Eric A ^a   Sant, Sanket P ^a   Liu, Yonghua ^a   Radhakrishnan, Arun ^a   Overzet, Lawrence J ^a   Goeckner, Matthew J ^a  

^a The University of Texas at Dallas   (United States)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INITIAL WALL CONDITIONS; SURFACE TEMPERATURE;

DEPOSITION; ELECTRONIC EQUIPMENT; FLUOROCARBONS; PLASMA ETCHING; SURFACE CHEMISTRY; TEMPERATURE DISTRIBUTION;

INDUCTIVELY COUPLED PLASMA;

EID: 31044436005     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2049309     Document Type: Article

References (27)

1. G. S. Oehrlein, Y. Zhang, D. Vender, and O. Joubert, J. Vac. Sci. Technol. A 12, 333 (1994).
2. H. Horiike, K. Kubota, H. Shindo, and T. Fukasawa, J. Vac. Sci. Technol. A 13, 801 (1995).
3. M. Schaepkens and G. S. Oehrlein, J. Electrochem. Soc. 148, C211 (2001).
4. N. R. Rueger, J. J. Beulens, M. Schaepkens, M. F. Doemling, J. M. Mirza, T. E. F. M. Standaert, and G. S. Oehrlein, J. Vac. Sci. Technol. A 15, 1881 (1997).
5. T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A 16, 239 (1998).
6. T. E. F. M. Standaert, C. Hedlund, E. A. Joseph, G. S. Oehrlein, and T. J. Dalton, J. Vac. Sci. Technol. A 22, 53 (2004).
7. Baosuo Zhou, Eric A. Joseph, Lawrence J. Overzet, and Matthew J. Goeckner, J. Vac. Sci. Technol. A (in press).
8. S. Ito, K. Nakamura, and H. Sugai, Jpn. J. Appl. Phys., Part 1 33, 1261 (1994).
9. M. Schaepkens, R. C. M. Bosch, T. E. F. M. Standaert, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A 16, 2099 (1998).
10. H. Sugai, K. Nakamura, Y. Hikosaka, and M. Nakamura, J. Vac. Sci. Technol. A 13, 887 (1995).
11. E. A. Joseph, B. Zhou, S. P. Sant, L. J. Overzet, and M. J. Goeckner, J. Vac. Sci. Technol. A 22, 689 (2004).
12. M. J. Goeckner, J. M. Marquis, B. J. Markham, A. K. Jindal, E. A. Joseph, and B-S Zhou, Rev. Sci. Instrum. 75, 884 (2004).
13. H. Oshio, T. Ichiki, and Y. Horiiki, J. Electrochem. Soc. 147, 4273 (2000).
14. Y. Chinzei, T. Ichiki, R. Kurusaki, J. Kikuchi, N. Ikegami, T. Fukazawa, H. Shindo, and Y. Horiike, Jpn. J. Appl. Phys., Part 1 35, 2472 (1996).
15. M. J. Sowa, M. E. Littau, V. Pohray, and J. L. Cecchi, J. Vac. Sci. Technol. A 18, 2122 (2000).
16. M. Inayoshi, M. Ito, M. Hori, T. Goto, and M. Hiramatsu, J. Vac. Sci. Technol. A 16, 233 (1998).
17. K. Teii, M. Hori, T. Goto, and M. Ishii, Jpn. J. Appl. Phys., Part 1 87, 7185 (2000).
18. L. G. Wade, Jr., Organic Chemistry (Prentice-Hall, New Jersey, 1999), p. 142.
19. D. Edelson and D. L. Flamm, J. Appl. Phys. 56, 1522 (1984).
20. P. Ho, J. E. Johanns, R. J. Buss, and E. Meeks, J. Vac. Sci. Technol. A 19, 2344 (2001).
21. C. I. Butoi, N. M. Mackie, K. L. Williams, N. E. Capps, and E. R. Fisher, J. Vac. Sci. Technol. A 18, 2685 (2000).
22. S. J. Limb, K. K. Gleason, D. J. Edell, and E. F. Gleason, J. Vac. Sci. Technol. A 15, 1814 (1997).
23. I. T. Martin, G. Sh. Malkov, C. I. Butoi, and E. R. Fisher, J. Vac. Sci. Technol. A 22, 227 (2004).
24. S. P. Sant, Master thesis, University of Texas at Dallas, 2003, under the direction of M. J. Goeckner.
25. G. Cunge and J. P. Booth, J. Appl. Phys. 85, 3952 (1999).
26. K. Sasaki, H. Furukawa, and K. Kadota, J. Appl. Phys. 88, 5585 (2000).
27. K. Ishikawa, S. Hayashi, and M. Sekine, J. Appl. Phys. 93, 1403 (2003).