SiO2 etching employing inductively coupled plasma with hot inner wall

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2472-2476

  Chinzei, Yasuhiko ^a   Ichiki, Takanori ^a   Kurosaki, Ryo ^b   Kikuchi, Jyun ^b   Ikegami, Naokatsu ^c   Fukazawa, Takayuki ^d   Shindo, Haruo ^e   Horiike, Yasuhiro ^a  

^a TOYO UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c OKI ELECTRIC INDUSTRY CO   (Japan)

^d TOKYO ELECTRON LTD   (Japan)

^e TOKAI UNIVERSITY   (Japan)

Author keywords

Inductively coupled plasma; Ion and radical measurements; Poly Si mask; Selective SiO2 Si etching; Wall temperature

Indexed keywords

FLUOROCARBONS; HELIUM NEON LASERS; HYDROGEN; MASKS; MASS SPECTROMETERS; PLASMA DENSITY; POLYMERS; SILICA; SILICON WAFERS; TEMPERATURE;

HOT INNER WALL; INDUCTIVELY COUPLED PLASMA; ION AND RADICAL MEASUREMENT; LASER INTERFERENCE METHOD; MICROLOADING EFFECT; WALL TEMPERATURE;

PLASMA ETCHING;

EID: 0030120694     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2472     Document Type: Article

References (4)

1. K. Kubota, H. Matsunioto, S. Shingubara, H. Shindo and Y. Horiike: Jpn. J. Appl. Phys. 34 (1995) 13.
2. H. Sugai, K. Nakamura, Y. Hikosaka and M. Nakamura: J. Vac. Sci. & Technol. A 13 (1995) 887.
3. T. Fukasawa, T. Nouda, A. Nakamura, H. Shindo and Y. Horiike: Jpn. J. Appl. Phys. 32 (1993) 6076.
4. J. Kikuchi, R. Kurosaki, S. Fujimura and H. Yano: SPIE 2336 (1995) 111.