Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1144-1148

  Sullivan, G J ^a   Ikhlassi, A ^a   Bergman, J ^a   Dewames, R E ^a   Waldrop, J R ^a   Grein, C ^b   Flatte M ^c   Mahalingam, K ^d   Yang, H ^e   Zhong, M ^e   Weimer, M ^e  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c UNIVERSITY OF IOWA   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HGCDTE ALLOYS; INFRARED PHOTODETECTORS; SHUTTER SEQUENCING;

HETEROJUNCTIONS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

QUANTUM EFFICIENCY;

EID: 30744473433     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1928238     Document Type: Conference Paper

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