Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy

Physical Review Letters

Volumn 85, Issue 14, 2000, Pages 2953-2956

  Steinshnider, J ^a   Weimer, M ^a   Kaspi, R ^b   Turner, G W ^c  

^a TEXAS A AND M UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL IMPURITIES; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; X RAY DIFFRACTION;

CROSS SECTIONAL SCANNING TUNNELING MICROSCOPY; HIGH RESOLUTION X RAY DIFFRACTION; INTERFACIAL BONDING; NON COMMON ATOM HETEROJUNCTIONS;

HETEROJUNCTIONS;

EID: 0034298604     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.2953     Document Type: Article

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