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Volumn 81, Issue 19, 2002, Pages 3675-3677

Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF WAVELENGTHS; FIELD OF VIEWS; IN-VACUUM; INAS/GASB SUPERLATTICES; JOHNSON NOISE; OPERATING TEMPERATURE; PEAK DETECTIVITY; PEAK RESPONSIVITY; PHOTOVOLTAIC DETECTOR; REVERSE BIAS; TYPE II; ZERO BIAS;

EID: 79956033393     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1520699     Document Type: Article
Times cited : (160)

References (8)
  • 7
    • 79958239501 scopus 로고    scopus 로고
    • "n" is a positive integer, the dashes represent chemical bonds, and the superlattice formula is written in the real order of atomic layers
    • "n" is a positive integer, the dashes represent chemical bonds, and the superlattice formula is written in the real order of atomic layers.
  • 8
    • 79955999111 scopus 로고    scopus 로고
    • Denoted previously as 17InAs/7GaSb with InSb interfaces in, and, apl APPLAB 0003-6951
    • Denoted previously as 17InAs/7GaSb with InSb interfaces in Y. Wei, A. Gin, M. Razeghi, and G. Brown, Appl. Phys. Lett. 80, 3262 (2002). apl APPLAB 0003-6951
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 3262
    • Wei, Y.1    Gin, A.2    Razeghi, M.3    Brown, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.