Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 73, Issue 19, 1998, Pages 2805-2807

  Harper, J ^a   Weimer, M ^a   Zhang, D ^b   Lin, C H ^b   Pei, S S ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; INTERFACES (MATERIALS); ION EXCHANGE; LASERS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

ANION EXCHANGE; INTERBAND CASCADE LASERS; WAVE VECTOR DEPENDENT ROUGHNESS;

HETEROJUNCTIONS;

EID: 0032500976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122596     Document Type: Article

References (18)

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10. The fits in Ref. 6, for example, yield σ=0.36 and λ=8.1 when those results are reexpressed in the dimensionless form adopted here.
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12. The bulk projected Sb fraction is less reliably determined than its As counterpart due to the nonuniform profile from segregation.
13. We note that the sum of As- and Sb-like spectral densities in Table I is very close to the total white-noise power deduced from Fig. 2.
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