Effects of As2 versus As4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1626-1630

  Nosho, B Z ^a   Bennett, B R ^a   Whitman, L J ^a   Goldenberg, M ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; FILM GROWTH; INTERFACES (MATERIALS); ION EXCHANGE; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ANION EXCHANGE; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY; FILM STABILITY; GALLIUM ANTIMONIDE; INDIUM ARSENIDE; SURFACE ROUGHENING;

HETEROJUNCTIONS;

EID: 0035535367     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1386377     Document Type: Conference Paper

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