Combined x-ray diffraction/scanning tunneling microscopy study of segregation and interfacial bonding in type-II heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1593-1597

  Zhong, M ^a   Steinshnider, J ^a   Weimer, M ^a   Kaspi, R ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEGREES OF FREEDOM (MECHANICS); ENERGY GAP; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SCANNING TUNNELING MICROSCOPY; STRAIN; X RAY DIFFRACTION;

INTERFACE STRUCTURE; INTERFACIAL BONDING; INVERTED HETEROJUNCTIONS; VARIABLES;

HETEROJUNCTIONS;

EID: 3242668907     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1699341     Document Type: Conference Paper

References (14)

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8. Natural lattice constants are from O. Madelung, Semiconductors, Group IV Elements and III-V Compounds (Springer, Berlin, 1991). Tetragonally distorted values, as well as the dynamical simulations in Figs. 4 and 5, are from GID_SL on the Web; see http://sergey.gmca.aps.anl.gov.
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11. As adopted in Table I presumes arsenic-for-antimony exchange only along the normal heterojunction. The exchange fraction per period, including both normal and inverted interfaces, is then one-half this value.
12. 2-dependent arsenic-for-antimony exchange fraction, postulated in Table I, and a reciprocally dependent antimony-for-arsenic exchange coefficient at the inverted heterojunction instead.
13. 2 case.
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