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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4288, Issue , 2001, Pages 171-182

Optoelectronic properties of photodiodes for the mid- and far-infrared based on the InAs/GaSb/AlSb materials family

(8) Fuchs, F a Burkle L a Hamid, R a Herres, N a Pletschen, W a Sah, R E a Kiefer, R a Schmitz, J a

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

Focal plane array; InAs (GaIn)Sb superlattices; Infrared photodiodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SPECTROSCOPY; SPECTRUM ANALYSIS; X RAY DIFFRACTION ANALYSIS;

FOCAL PLANE ARRAY; INFRARED PHOTODIODES; SEMICONDUCTING ALUMINUM ANTIMONY; SEMICONDUCTING GALLIUM ANTIMONY; SEMICONDUCTING INDIUM ARSENIDE;

INFRARED DETECTORS;

EID: 0034874672 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.429404 Document Type: Conference Paper

Times cited : (57)

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