Indium surface segregation in AlSb and GaSb

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 69-78

  Renard, C ^a   Marcadet, X ^a   Massies, J ^a,b   Prevot I ^a   Bisaro, R ^a   Galtier, P ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CNRS   (France)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconductor III V materials; B3. Infrared devices

Indexed keywords

GALLIUM COMPOUNDS; INFRARED RADIATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR MATERIALS;

SURFACE SEGREGATION;

ALUMINUM COMPOUNDS;

EID: 0141895095     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.010     Document Type: Article

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