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Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 301-308

Arsenic cross-contamination in GaSb/InAs superlattices

(5) Jackson, E M a,b Boishin, G I a,c Aifer, E H a Bennett, B R a Whitman, L J a

a NAVAL RESEARCH LABORATORY (United States)

b SFA INC (United States)

c NOVA RESEARCH INC (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B1. Arsenates; B2. Semiconducting III V materials

Indexed keywords

ARSENIC; CHEMICAL BONDS; CONTAMINATION; GALLIUM COMPOUNDS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PARAMETER ESTIMATION; SCANNING TUNNELING MICROSCOPY; STRAIN; X RAY DIFFRACTION;

ANTIMONIDES; ARSENATES; CROSS-CONTAMINATION; SEMICONDUCTING III-V MATERIALS;

SUPERLATTICES;

EID: 4544227746 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.06.033 Document Type: Article

Times cited : (20)

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