Grown-in and radiation-induced defects in 4H-SiC

Materials Research Society Symposium Proceedings

Volumn 864, Issue , 2005, Pages 3-13

  Eberlein, T A G ^a   Jones, R ^a   Briddon, P R ^b   Oberg S ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LATTICE CONSTANTS; PHOTOLUMINESCENCE; PROBABILITY DENSITY FUNCTION; SILICON; SWITCHING;

LATTICE DAMAGE; OPTICAL ACTIVITY; RADIATION-INDUCED DEFECTS;

SILICON CARBIDE;

EID: 30544445601     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-864-e1.2     Document Type: Conference Paper

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