Transmission electron microscope radiation damage of 4H and 6H SiC studied by photoluminescence spectroscopy

Diamond and Related Materials

Volumn 11, Issue 12, 2002, Pages 1923-1945

  Steeds, J W ^a   Evans, G A ^a   Danks, L R ^a   Furkert, S ^a   Voegeli, W ^a   Ismail, M M ^a   Carosella, F ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Photoluminescence; Radiation induced defects; Silicon carbide

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRON IRRADIATION; PHOTOLUMINESCENCE; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

LOW-TEMPERATURE PHOTOLUMINESCENCE MICROSCOPY;

SILICON CARBIDE;

DAMAGE;

EID: 0036994506     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00212-1     Document Type: Article

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