SCOPUS 정보 검색 플랫폼

Volumn 483-485, Issue , 2005, Pages 369-372

Recombination enhanced defect annealing in 4H-SiC

Author keywords

Enhanced annealing; Radiation damage; SiC

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON IRRADIATION; ELECTRON TRAPS; LASER EXCITATION; PHOTOLUMINESCENCE;

CAPACITANCE TRANSIENT SPECTROSCOPY; DEFECT CONCENTRATION; ENHANCED ANNEALING; RECOMBINATION ENHANCED ANNEALING;

SILICON CARBIDE;

EID: 30544441261 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-963-6.369 Document Type: Conference Paper

Times cited : (9)

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