Characteristics of thermally evaporated HfO 2

Proceedings - Electrochemical Society

Volumn 22, Issue , 2003, Pages 385-395

  Garg, R ^a   Chowdhury, N A ^a   Jarwal, R K ^a   Misra, D ^a   Swain, P K ^b   Bhaskaran, M ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; LEAKAGE CURRENT DENSITY; TUNGSTEN BOATS;

ANNEALING; CURRENT DENSITY; LEAKAGE CURRENTS; MOS CAPACITORS; PERMITTIVITY; PHOTOLITHOGRAPHY; SILICA; THERMODYNAMIC STABILITY; THIN FILMS; TUNGSTEN;

HAFNIUM COMPOUNDS;

EID: 3042774353     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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