Structure and properties of silicon oxide films deposited in a dual microwave-rf plasma reactor

Thin Solid Films

Volumn 384, Issue 2, 2001, Pages 230-235

  Benissad, N ^a   Aumaille, K ^b   Granier, A ^b   Goullet, A ^b  

^a UNIVERSITÉ PARIS SUD   (France)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL REACTORS; COMPOSITION EFFECTS; DEPOSITION; ELECTRIC POTENTIAL; ELLIPSOMETRY; EMISSION SPECTROSCOPY; INFRARED SPECTROSCOPY; PLASMA DEVICES; POROUS MATERIALS; SILICA;

MICROWAVE PLASMA REACTORS;

OPTICAL FILMS;

EID: 0034817575     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01870-8     Document Type: Article

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