Gate dielectric degradation mechanism associated with DBIE evolution

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 117-121

  Pey, K L ^a   Ranjan, R ^a   Tung, C H ^b   Tang, L J ^a,b   Lin, W H ^c   Radhakrishnan, M K ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Breakdown; Dielectric breakdown induced epitaxy; Gate dielectric

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; LEAKAGE CURRENTS; METALS; MOS DEVICES; SOLVENTS; TRANSISTORS;

BREAKDOWN; DEGRADATION MECHANISM; DIELECTRIC BREAKDOWN INDUCED EPITAXIES; DIELECTRIC DEGRADATION; DIELECTRIC-BREAKDOWN-INDUCED EPITAXY; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; ULTRATHIN GATE DIELECTRICS;

GATE DIELECTRICS;

EID: 31144473439     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315310     Document Type: Conference Paper

References (11)

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