Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2940-2942

  Pey, K L ^a   Tung, C H ^b   Tang, L J ^b   Lin, W H ^c   Radhakrishnan, M K ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

DIELECTRIC BREAKDOWN;

MOSFET DEVICES;

EID: 0142198439     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616195     Document Type: Article

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