Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1471-1476

  Pey, K L ^a   Tung, C H ^b   Radhakrishnan, M K ^c   Tang, L J ^a,b   Sun, Y ^a   Wang, X D ^a   Lin, W H ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FAILURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

CONSTANT-CURRENT-STRESSES;

MOSFET DEVICES;

EID: 0042694471     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00261-0     Document Type: Conference Paper

References (14)

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