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Physica Status Solidi (A) Applied Research

Volumn 201, Issue 7, 2004, Pages 1500-1509

The near band-edge emission and photoconductivity response of phosphorus-doped ZnO thin films grown by pulsed laser deposition

(4) Heo, Y W a Ip, K a Pearton, S J a Norton, D P a

a University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EXCITONS; FILM GROWTH; OXYGEN; PHOSPHORUS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; ULTRAVIOLET RADIATION; ZINC OXIDE;

BAND-EDGE EMISSION; EXCITON STATES; ROOM TEMPERATURE; ULTRAVIOLET PHOTOCONDUCTIVITY;

THIN FILMS;

EID: 3042641842 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200306792 Document Type: Article

Times cited : (27)

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