Polyhedral oligomeric silsesquioxane (POSS) based resists: Material design challenges and lithographic evaluation at 157 nm

Chemistry of Materials

Volumn 16, Issue 13, 2004, Pages 2567-2577

  Tegou, Evangelia ^a   Bellas, Vassilios ^a   Gogolides, Evangelos ^a   Argitis, Panagiotis ^a   Eon, David ^b   Cartry, Gilles ^b   Cardinaud, Christophe ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH-RESISTANCE; NANOMETERS; PHOTOACID GENERATOR (PAG); SURFACE SEGREGATION;

CARBOXYLIC ACIDS; COPOLYMERS; ETCHING; LITHOGRAPHY; PHOTORESISTORS; POLYMETHYL METHACRYLATES; SEGREGATION (METALLOGRAPHY); SILICON; THICK FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OLIGOMERS;

2 (TRIFLUOROMETHYL)ACRYLIC ACID; ACID ANHYDRIDE; CARBOXYLIC ACID; ITACONIC ANHYDRIDE; METHACRYLIC ACID DERIVATIVE; METHACRYLIC ACID TERT BUTYL ESTER; MONOMER; OLIGOMER; PERFLUOROOCTANE; PERFLUOROOCTYLSULFONATE; POLYHEDRAL OLIGOMERIC SILSESQUIOXANE; SILICON DERIVATIVE; TERT BUTYL TRIFLUOROMETHACRYLATE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL STRUCTURE; FILM; LITHOGRAPHY; MATERIALS; PHYSICAL CHEMISTRY; POLYMERIZATION; SEMICONDUCTOR; TECHNOLOGY;

EID: 3042611831     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm035089x     Document Type: Article

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